0_7830 Light emitters in silicon based on complex impurities are currently scrutinized for their applicability as photon and spin quantum-bits. Their appeal is many fold: 1) they are nominally identical and in ensemble emission they have a sharp zero phonon line (FWHM of ∼10 μeV in conventional Si and less than 1 μeV, isotopically purified 28Si; 2) their emission lies in the near-infrared range covering the telecommunication O, E and S bands; 3) their recombination lifetime can be as short as a few ns; 4) they are stable in temperature and time and can be detected up 120 K; 5) they have well-defined polarization axes.The possibility to exploit them in quantum technologies is highly entrancing, provided the advantages that this solid-state platform offers. Silicon technology steps on the fabrication methods developed in the last 50 years for electronic devices and is by far more advanced than any other material: fabrication of electronic devices can be provided in an industrial production chain with high material purity (99.9999999%, nine nines), large wafers up to 17 inches, silicon on insulator wafers up to 12 inches, p and n doping, top-down lithography with ∼nm resolution, availability of isotopically purified 28 Si wafers (a spin-less matrix). The renewed interest in this class of Si-based emitters in the context of quantum technologies resulted in several breakthroughs over the last few years with the demonstration of: 1) single-photon emission from a large zoology of defects, 2) photon coalescence, 3) spin control, 4) integration in photonic devices, such as Mie resonators, integrated photonic circuits, ring resonators, and photonic crystals providing Purcell effect, 5) position control of the emitters with localised ion implant.In my presentation I will introduce our recent results on carbon- and self-interstitial-related impurities (respectively, G- and W-centers) in silicon on insulator formed by ion implant [1,2,3,4,5], their integration in photonic devices (such as dielectric Mie- [6] and whispering gallery-resonators [7]) and the engineering of their electronic states via application of strain [8].[1] Khoury et al. JAP 131, 200901 (2022)[2] Beaufils et al., PRB 97, 035303 (2018)[3] Redjem et al., Nat. Elec. 3, 738 (2020)[4] Durand et al., PRL, 126, 083602 (2021)[5] Baron et al., ACS Phot. 9, 2337 (2022)[6] Khoury et al. Adv. Opt. Mat. 10, 2201295 (2022)[7] Lefaucher et al. APL 122, 061109 (2022)[8] Ristori et al., in progress