The planar structure of carbon atoms in graphene make it suitable to fabricate novel molecular and spintronic devices. Here we report the development on the fabrication of graphene-based molecular junctions using Electron Beam Lithography (EBL). We studied different designs of molecular devices with both lateral and back gates depending on the different type of graphene we used (cvd-grown graphene transferred on SiO2 or multilayer graphene epitaxially grown on the C face of SiC). Junctions with gap of ca.100 nm have been obtained by EBL lithography while electroburning process was used to open nm-sized gaps. As prototypical device, we focus here on the preparation and characterization of three terminal devices with graphene nano-ribbon (GNR) molecules used as conducting channel between two graphene electrodes. To deposit them on the junction, one viable strategy is to use atomically precise GNRs synthesized in liquid-phase and utilize the Electrospray deposition (ESD) technique, that is an alternative technique that allows to softly land large and heavy molecules from liquid suspension on any type of substrates . The deposition process was controlled and optimized by using Raman spectroscopy, Scanning Probe Microscopy and Scanning Electron Microscopy. When deposited on graphitic electrodes, GNRs were used as semi-conducting channel in three terminal devices showing gate tunability of the electrical current.