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Abstract's title: Characterization of 4H-Silicon Carbide addressed to thermo-optic effect at fiber-optic communication wavelengths
Submitting author: Giacomo Messina
Affiliation: DIIES Dept. University Mediterranea of Reggio Calabria
Affiliation Address: Via Graziella, Località Feo di Vito, 89122 Reggio Calabria
Country: Italy
Oral presentation/Poster (Author's request): Poster
Other authors and affiliations: Francesco Giuseppe Della Corte (DIIES Dept., University “Mediterranea” of Reggio Calabria, 89122 Reggio Calabria, Italy), Giuliana Faggio (DIIES Dept., University “Mediterranea” of Reggio Calabria, 89122 Reggio Calabria, Italy), Andrea Gnisci (DIIES Dept., University “Mediterranea” of Reggio Calabria, 89122 Reggio Calabria, Italy), Angela Malara (University “Mediterranea” of Reggio Calabria, 89122 Reggio Calabria, Italy), Sandro Rao (DIIES Dept., University “Mediterranea” of Reggio Calabria, 89122 Reggio Calabria, Italy)
Abstract

Characterization of 4H-Silicon Carbide addressed to thermo-optic effect at fiber-optic communication wavelengths

Francesco Giuseppe Della Corte1, Giuliana Faggio1, Andrea Gnisci1, Angela Malara2, Giacomo Messina1*, Sandro Rao1

 

1* DIIES Dept., University “Mediterranea” of Reggio Calabria, 89122 Reggio Calabria, Italy,

2 University “Mediterranea” of Reggio Calabria, 89122 Reggio Calabria, Italy,

gmessina@unirc.it

 

The knowledge of material physical properties is essential for a proper design of micro-electronic or micro-photonic devices. Temperature is known to induce deviations of the refractive index from the value measured at room temperature. This effect, known as thermo-optic effect (TOE), may cause incorrect functioning of passive and active devices, where the wavelength dependence scales with the refractive index, such as waveguides, lasers, switches and modulators [1]. The parameter measuring the strength of this effect is the thermo-optic coefficient (TOC), dn/dT.

Silicon carbide, considered among the most suitable materials for the design of advanced electronic systems, is known for its low TOC and large thermal conductivity [2], but just few polytypes have been exploited so far.

In this work, the thermo-optic coefficient was determined for 4H silicon carbide (4H-SiC)at the wavelength of interest for fiber-optic communication systems, l=1.55 mm, by using a simple direct technique based on the multiple beam interference in a Fabry-Perot cavity [1, 3]. The calculated index of refraction values showed a very good linearity in the considered temperature range leading to a TOC for 4H-SiC, dn/dT = 5.11×10-5 K-1.

Moreover, a detailed optical and structural characterization of 4H-SiC by means of micro-Raman and ellipsometric spectroscopy is presented too. Raman spectroscopy provided information on crystalline quality and spatial uniformity of samples, while refractive index, extinction and absorption coefficients were obtained in a wide wavelength range through ellipsometry.

 

References

[1] F.G. Della Corte et al., Applied Physics Letters 77 (2000) 1614.

[2] S. Yamada et al., Optics letters 36 (2011) 3981.

[3] F. G. Della Corte et al., Applied Physics Letters 79 (2001) 168.