An ambitious objective of the modern magnetism is the control of the magnetization of materials via the application of an electric field . This objective is obviously driven by the important fallout on the electronic industry that this possibility would open. The magnetization control with electric field is now possible in those materials that display a spontaneous coupling between ferroelectric (FE) and ferromagnetic (FM) orders that are called multiferroics. Unfortunately the low magnetoelectric coupling coefficient like in BiFeO3  and sometime the low Tc have for the moment limited the use of these materials in real devices. Two main routes are currently explored to overcome this limitations: the doping of mutiferroics with substitutional magnetic impurities and the realization of heterostructures in which different properties like ferroelectricity and ferromagnetism are artificially coupled to obtain high magnetoelectric coupling coefficient. The advantages and drawbacks of these two different solutions will be presented together with some examples: the Bi2FeCrO6 double peroskite , the Fe/BaTiO3 , LSMO/BTO and ZnO/Co interfaces .
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 in preparation