FisMat2017 - Submission - View

Abstract's title: Reversible spin texture in ferroelectric GeTe
Submitting author: Christian Rinaldi
Affiliation: Dipartimento di Fisica - Politecnico di Milano
Affiliation Address: via G. Colombo 81, 20133 Milano
Country: Italy
Oral presentation/Poster (Author's request): Oral presentation
Other authors and affiliations: Sara Varotto (Dipartimento di Fisica, Politecnico di Milano), Marco Asa (Dipartimento di Fisica, Politecnico di Milano), Matteo Cantoni (Dipartimento di Fisica, Politecnico di Milano), Jagoda Slawinska (Consiglio Nazionale delle Ricerche CNR-SPIN, Chieti), Jun Fujii (Istituto Officina dei Materiali CNR Laboratorio TASC, Trieste), I. Vobornik (Istituto Officina dei Materiali CNR Laboratorio TASC, Trieste), G. Panaccione (Istituto Officina dei Materiali CNR Laboratorio TASC, Trieste), S. Cecchi (Paul-Drude-Institut für Festkörperelektronik, Berlino), R. Calarco (Paul-Drude-Institut für Festkörperelektronik, Berlino), S. Picozzi (Consiglio Nazionale delle Ricerche CNR-SPIN, Chieti), R. Bertacco (Dipartimento di Fisica, Politecnico di Milano)
Abstract

Spin-orbit coupling effects in materials with broken inversion symmetry are responsible for peculiar spin textures. In particular, ferroelectric materials make possible for a non-volatile control of the spin degree of freedom through the electrical inversion of the spin texture, thanks to their reversible ferroelectric polarization. Such functionality hold potential for technological applications exploiting spin effects controlled by electric fields.

Germanium Telluride stands out as material for spin-orbitronics being a Ferroelectric Rashba Semiconductors [1]. Its non-volatile ferroelectricity generates and controls the giant bulk Rashba-type spin-splitting of electronic bands. Moreover, GeTe’ semiconductivity allows for the realization of spin-based transistors.

Here, the connection between ferroelectric polarization and Rashba spin texture in GeTe is experimentally demonstrated by combined use of Piezoresponse Force Microscopy and Spin and Angular Resolved PhotoEmission Spectroscopy (ref. [2] and advances). Charge-to-spin conversion phenomena in GeTe are investigated by unidirectional spin Hall magnetoresistance [4] in Fe/GeTe heterostructures [3]. This work looks toward non-volatile electric control of spin transport in semiconductors.

[1] D. Di Sante et al., Adv. Mater. 25, 509-513 (2013)

[2] M. Liebmann, C. Rinaldi et al., Adv. Mater. 28, 560-565 (2016)

[3] C. Rinaldi et al., APL Mater. (invited) 4, 032501 (2016)

[4] C. O. Avci et al., Nature Phys. 11, 570 (2015)