FisMat2017 - Submission - View

Abstract's title: Epsilon-Ga2O3: a novel wide-bandgap semiconductor
Submitting author: Roberto Fornari
Affiliation: University of Parma
Affiliation Address: Dept. of Mathematical, Physical and Computer Sciences Viale delle Scienze 7/A 43124 Parma
Country: Italy
Oral presentation/Poster (Author's request): Oral presentation
Other authors and affiliations:

Semiconducting sesqui-oxides (In2O3, Ga2O3, Al2O3 and related alloys) have become a hot topic of semiconductor physics. Thanks to its wide bandgap of about 4.9 eV and extremely high Baliga FOM, Ga2O3 is by far the most investigated among oxide semiconductors, in view of applications in power electronics and solar-blind UV detection. This material presents a number of polymorphs, but only the thermodynamically-stable beta phase (monoclinic) has been extensively investigated so far.  Our team on the other hand focused the attention on the epsilon polymorph, which is thermodynamically stable up to 700°C and has an hexagonal structure, thus avoiding anisotropy problems and offering a better matching to usual sapphire substrates and/or nitride templates.  This talk will include a description of the developed epitaxial process for (0001)-oriented epsilon-Ga2O3 along with an overview of its crystallographic and physical characteristics. Finally, it will be shown that this semiconductor may conveniently be utilised for preparing UV photo-detectors (for wavelengths below 260 nm).